Orthogonal test method of annealing conditions for relaxor ferroelectric ceramics 弛豫铁电陶瓷最佳退火条件的正交试验法
Influence of annealing conditions on stress impedance effect of fecunbsib amorphous alloy strip 非晶带材应力阻抗效应的影响
The best annealing condition of the zno films grown by electron beam evaporation technique was achieved 采用电子束蒸发的方法在si衬底上生长zno薄膜,通过退火实验,得到了最佳的退火条件。
With sem , x - ray diffraction analysis , magnetic measurement by magnetic property measurement system , the effects of growth and annealing conditions are analyzed 超导薄膜,采用磁测量m - t x射线衍射扫描电子显微镜技术分析了各种沉积及退火条件对mgb
The difficulty can be overcomed that the n atom is not easy to be doped into zno . if we control the annealing condition , the residual nitrogen atoms will become acceptors in zno : n films 通过这种方法可以克服n原子不容易惨杂进氧化锌的困难,并且可以通过控制退火过程来控制n原子< wp = 5 >的掺杂浓度。